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研究领域

太阳能电池、微纳电子器件、IC设计与AI芯片方向

应用场景

1、显示器材料

2、柔性电子（eg、生物传感器，可穿戴设备）

工作经历

西交利物浦大学太仓校区芯片学院创始项目总监 - 2019 年至今

利物浦大学名誉教师 - 2017 年至今

副教授, 西安交利物浦大学 - 2021 至今

助理教授，西安交利物浦大学 - 2017 至 2021

香港科技大学纳米及先进材料研究所高级研究工程师 - 2014 至 2017

IC 设计工程师，Minilogic Device Cooperation，香港科学园 - 2007 至 2009

教育背景

香港科技大学博士后，-2017

博士, 利物浦大学, - 2014

理学硕士, 香港科技大学, - 2007

东南大学工学士 - 2006

获得荣誉

n 第十九届全国大学生机器人大赛-国际赛区组：导师二等奖（2020）

n 第十八届全国大学生机器人大赛国际赛区组：导师三等奖（2019）

n 江苏省高层次创新创业人才计划（2018年）

科研项目

1、基于溶液法制备的介电层薄膜晶体管器件可靠性研究

2、面向嵌入式人工智能芯片集成电路设计模块关键技术的研究开发

3、基于ARM架构的嵌入式人工智能芯片的研发

4、Solution-processed High-k Gate Dielectric for Thin-film Transistor

5、基于柔性基底存储器纳米颗粒的研究及应用

6、基于溶液法制备的氧铪介电层薄膜晶体管器件可靠性研究

产学研合作

苏州市创芯思特智能科技有限公司

专    利

1、一种用于超级电容器的聚丙烯腈/二硫化钼复合材料的制备方法

2、一种电动汽车的无线充电系统

3、基于铝氧化物的RRAM及其制备方法

4、金属氧化物薄膜晶体管及其制备方法

5、柔性衬底的薄膜晶体管及其制备方法

6、微纳线制备装置及微纳结构

7、铯掺杂钙钛矿吸光层的制备方法与应用

8、基于氧化石墨烯的RRAM器件及其制备方法

9、封装太阳能电池

10、微纳线制备装置及微纳结构

11、一种基于二维半导体材料薄膜晶体管及其制备方法

12、一种基于纳米簇绝缘层的高性能薄膜晶体管及制备方法

13、一种双氧化层RRAM及其制备方法

14、双层金属氧化物半导体异质结薄膜晶体管及其制备方法

15、一种基于硅酸铪的金属氧化物半导体电容器件及制备方法

16、一种双层金属氧化物半导体异质结薄膜晶体管及制备方法

17、一种CTM存储器及其制备方法

18、一种双氧化层RRAM

19、一种基于二维半导体材料薄膜晶体管

20、一种基于纳米簇绝缘层的高性能薄膜晶体管

21、一种双层金属氧化物半导体异质结薄膜晶体管

22、一种基于硅酸铪的金属氧化物半导体电容器件

23、一种CTM存储器

24、一种掺杂金属氧化物的阻变式随机存取存储器及制备方法

25、一种等离子体增强型溶液燃烧法制备的薄膜晶体管及方法

26、一种氟和铷掺杂钙钛矿太阳能电池及制备方法

27、一种用双氧水提高抗辐射性的薄膜晶体管器件及制备方法

28、一种氟和铷掺杂钙钛矿太阳能电池

29、一种掺杂金属氧化物的阻变式随机存取存储器

30、一种用双氧水提高抗辐射性的薄膜晶体管器件

31、一种高稳定性的钙钛矿太阳能电池

32、一种柔性纳米纤维氧化锌锡的场效应晶体管及其制备方法

33、一种柔性纳米纤维氧化锌锡的场效应晶体管

34、基于镧氧化物的RRAM及其制备方法

35、具有保护结构的钙钛矿太阳能电池及其制备方法

36、基于纳米簇介电层的柔性纳米纤维氧化镓锡晶体管及制备方法

37、一种基于生物材料的RRAM及其制备方法

38、钨掺杂氧化物钙钛矿太阳能电池及其制备方法

39、基于自燃烧法的双元高介电常数绝缘层的制备方法

40、基于氧化锆和氧化镧的透明薄膜晶体管器件及其制备方法

41、Micro-nano wire manufacturing device and micro-nano structure

42、基于锂掺杂透明氧化物的突触型薄膜晶体管及其制备方法

43、掺杂二维材料的阻变式随机存取存储器及其制备方法

44、仿生突触晶体管及其制备方法

45、掺杂钾离子的薄膜晶体管及其制备方法

46、自驱动摩擦纳米发电突触晶体管

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发表文献

n Y X Fang, Chun Zhao*, M Ivona and C Z Zhao*, High-performance and radiation-hardened solution-processed ZrLaO gate dielectrics for large area applications, accepted, ACS Applied Materials & Interfaces (2021) {9.22, JCR Q1}

n X K Xie, Y F Chen, J X Jiang, J Y Li, Y Q Yang, Y N Liu, L Yang, X Tu, X H Sun, Chun Zhao*, M C Sun* and Z Wen*, Self-Powered Gyroscope Angle Sensor based on Resistive Matching Effect of Triboelectric Nanogenerator, accepted, Advanced Materials Technologies, (2021) {7.848, JCR Q1} {Inside Cover}

n T S Zhao, Chun Zhao*, W Y Xu, Y N Liu, H Gao, I Z Mitrovic, E G Lim, L Yang, and C Z Zhao, Bio-inspired Photoelectric Artificial Synapse based on Two-Dimensional Ti3C2Tx MXenes Floating Gate, accepted, Advanced Functional Materials (2021) {18.8, JCR Q1}

n C Z Ding, L Yin, L P Zhang, R Huang, S Z Fan, Q Luo, J Lin, F S Li, Chun Zhao, R Osterbacka and C Q Ma, Revealing the catastrophic failure mechanism of n-i-p type perovskite solar cells under operating and the suppression method, accepted, Advanced Functional Materials (2021) {18.8, JCR Q1}

n T S Zhao, C G Liu, Chun Zhao*, W Y Xu, Y N Liu, I Z Mitrovic, E G Lim and C Z Zhao, High-Performance Solution-Processed Ti3C2Tx MXenes Doped ZnSnO Thin-Film Transistors via the Formation of a Two-Dimensional Electron Gas, accepted, Journal of Materials Chemistry A (2021) {12.73, JCR Q1}

n Z J Shen, Chun Zhao*, Y N Liu, Y F Qi, I Z Mitrovic, L Yang, C Z Zhao, Performance Variation of Solution-processed Memristor Induced By Different Top Electrode, accepted, Solid-State Electronics (2021) {1.90, JCR Q2} {Invited Paper}

n H B Wang, Chun Zhao*, L Yin, X J Li, X Tu, E G Lim, Y N Liu, C Z Zhao, W-doped TiO2 as electron transport layer for high performance solution-processed perovskite solar cells, 150298, Applied Surface Science (2021) {6.70, JCR Q1}

n Q H Liu, Chun Zhao*, T S Zhao, Y N Liu, I Z Mitrovic, W Y Xu, L Yang, C Z Zhao, Ecofriendly Solution-Combustion-Processed Thin-Film Transistors for Synaptic Emulation and Neuromorphic Computing, accepted, ACS Applied Materials & Interfaces (2021) {9.22, JCR Q1}

n Z J Shen, Chun Zhao*, T S Zhao, W Y Xu, Y N Liu, Y F Qi, I Z Mitrovic, L Yang, C Z Zhao, Artificial Synaptic Performance with Learning Behavior for Memristor Fabricated with Stacked Solution-processed Switching Layers, 3, 1288, ACS Applied Electronic Materials (2021) {3.31, JCR Q1}

n X K Xie, X P Chen, Chun Zhao*, Y N Liu, X H Sun, C Z Zhao and W Zhan, Intermediate layer for enhanced triboelectric nanogenerator, 79, 105439, Nano Energy (2020) {17.88, JCR Q1}

n Z J Shen, Chun Zhao*, Y F Qi, W Y Xu, Y N Liu, I Z Mitrovic, L Yang, C Z Zhao, Advances of RRAM Devices: Materials, Resistive Switching Mechanisms and Bionic Synaptic Application, 10 (8), 1437, Nanomaterials (2020) {5.07, JCR Q1}

n X P Chen, X K Xie, Y N Liu, Chun Zhao, M Wen and Z Wen, Advances in Healthcare Electronics Enabled by Triboelectric Nanogenerators, 2004673, Advanced Functional Materials (2020) {18.8, JCR Q1}

n Q H Liu, Chun Zhao*, I Z Mitrovic, W Y Xu, L Yang and C Z Zhao, Comproportionation Reaction Synthesis to Realize High-Performance Water-Induced Metal-Oxide Thin-Film Transistors, 6 (8), 2000072, Advanced Electronic Materials (2020) {7.29, JCR Q1}

n Y W Li, Chun Zhao, D L Zhu, P J Cao, S Han, Y M Lu, M Fang, W J Liu and W Y Xu, Recent Advances of Solution-Processed Heterojunction Oxide Thin-Film Transistors, 10(5), 965, Nanomaterials (2020) {5.07, JCR Q1}

n C H He, Q Zhang, T W Gao, C G Liu, Z Y Zhao, C Z Zhao, Chun Zhao, R Nichols, J Yannick and L Yang, Charge Transport in Hybrid Platinum/Molecule/Graphene Single Molecule Junctions, 22, 13498, Physical Chemistry Chemical Physics (2020) {3.67, JCR Q1}

n Z J Shen, Chun Zhao*, Y F Qi, I Z Mitrovic, L Yang, J C Wen, Y B Huang, P Z Li and C Z Zhao, Memristive Non-volatile memory based on graphene materials, 11(4), 341, Micromachines (2020) {2.89, JCR Q1}

n T S Zhao, Chun Zhao*, J F Zhang, I Z Mitrovic, E G Lim, L Yang, T Song and C Z Zhao, Enhancement on the performance of eco-friendly solution-processed InO/AlO thin-film transistors via lithium incorporation, 154458, Journal of Alloys and Compounds (2020) {5.31, JCR Q1}

n Y F Qi, Z J Shen, Chun Zhao* and C Z Zhao, Effect of electrode area on resistive switching behavior in translucent solution-processed AlOx based memory device, 822, 153603, Journal of Alloys and Compounds (2019) {5.31, JCR Q1}

n Y X Fang, Chun Zhao*, S Hall, I Z Mitrovic, W Y XU, L Yang, T S Zhao, Q H Liu and C Z Zhao, Aqueous solution-processed AlOx dielectrics and their biased radiation response investigated by an on-site technique, 170, 108644, Radiation Physics and Chemistry (2019) {2.85, JCR Q2}

n Y F Qi, Z J Shen, C Z Zhao, I Z Mitrovic, W Y Xu, E G Lim, L Yang, J H He, T Luo, Y B Huang and Chun Zhao*, Resistive Switching Behavior of Solution-processed AlOx and GO based RRAM at Low Temperature, 107735, Solid-State Electronics (2019) {1.90, JCR Q2} {Invited Paper}

n Y X Fang, Chun Zhao*, I Z Mitrovic, S Hall, L Yang and C Z Zhao, Bias-stress stability and radiation response of solution-processed AlOx dielectrics investigated by on-site measurements, 217, 111113, Microelectronic Engineering (2019) {2.52, JCR Q2}

n Z J Shen, Y F Qi, I Z Mitrovic, C Z Zhao, S Hall, L Yang, T Luo, Y B Huang and Chun Zhao*, Effect of Annealing Temperature for Ni/AlOx/Pt RRAM Devices Fabricated with Solution-Based Dielectric, 10(7), 446, Micromachines (2019) {2.89, JCR Q1}

n C H He, Q Zhang, Y Q Fan, C Z Zhao, Chun Zhao, J Y Ye, Y Dappe, R Nichols and L Yang, Effect of Asymmetric Anchoring Groups on Electronic Transport in Hybrid Metal/Molecule/Graphene Single Molecule Junctions, 20, 1830, ChemPhysChem (2019) {3.10, JCR Q1}

n Y F Qi, Chun Zhao*, C Z Zhao, W Y Xu, Z J Shen, J H He, T S Zhao, Y X Fang, Q H Liu, R W Yi, L Yang, Enhanced Resistive Switching performance of Aluminum Oxide Dielectric with a Low Temperature Solution-processed Method, 158, 28-36, Solid-State Electronics (2019) {1.90, JCR Q2}

n Q Zhang, S H Tao, Y Q, Fan, C Z Zhao, Chun Zhao, W T Su, Y Dappe, R Nichols and L Yang, Technical effects of molecule-electrode contacts in graphene-based molecular junctions,122(40), 23200-23207, Journal of Physical Chemistry C (2018) {4.12, JCR Q1}

n S H Tao, Q Zhang, C H He, X F Lin, R C Xie, C Z Zhao, Chun Zhao, Y Dappe, R Nichols and L Yang, Graphene-contacted single molecular junctions with conjugated molecular wires, 2(1), 12-18, ACS Applied Nano Materials (2018) {5.09, JCR Q1}

n J J Wang, D L Ren, Z C Zhang, H W Xiang, J H Zhao, Z Y Zhou, X Y Li, H Wang, L Zhang, M L Zhao, Y X Fang, C Lu, Chun Zhao, C Z Zhao and X B Yan, A radiation-hardening Ta/Ta2O5-x/Al2O3/InGaZnO4 memristor for harsh electronics, 113, 122907, Applied Physics Letters (2018) {3.79, JCR Q1}

n C H He, Q Zhang, S H Tao, C Z Zhao, Chun Zhao, W T Su, Y J Dappe, R Nichols and L Yang, Carbon-Contacted Single Molecule Electrical Junctions, 5, 002877, Physical Chemistry Chemical Physics (2018) {3.67, JCR Q1}

n W Y Xu, L Y Hu, Chun Zhao, L J Zhang, D L Zhu, P J Cao, W J Liu, S Han, X K Liu, F Jia, Y X Zeng and Y M Lu, Low Temperature Solution-Processed IGZO Thin-Film Transistors, 6, 5, Applied Surface Science (2018) {6.70, JCR Q1}

n Q Zhang, C G Liu, S H Tao, R W Yi, W T Su, C Z Zhao, Chun Zhao, Y Dappe, R Nichols and L Yang, Fast and straightforward analysis approach of charge transport data in single molecule junctions, 29, 32, Nanotechnology (2018) {3.87, JCR Q1}

n Y D Yuan, R W Yi, Y Sun, J Q Zeng, J Q Li, J H Hu, Y C Zhao, W Sun, Chun Zhao, L Yang and C Z Zhao, Porous activated carbons derived from pleurotus eryngii for supercapacitor applications, 7539509, Journal of Nanomaterials (2018) {2.98, JCR Q2}

n Y F Qi, C Z Zhao, C G Liu, Y X Fang, J H He, T Luo, L Yang and Chun Zhao, Comparisons of switching characteristics between Ti/Al2O3/Pt and TiN/Al2O3/Pt RRAM devices with various compliance currents, 33, 4, Semiconductor Science and Technology (2018) {2.35, JCR Q1}