teacher

刘 雯

副教授

刘雯博士,西浦智能工程学院电子与电气工程系副教授,博士生导师,英国高等教育协会会士,第三代半导体产业技术创新战略联盟(CASA)青年创新促进委员会委员,西浦第三代半导体电力电子器件与功率集成国际创新研究院常务副主任,IEEE高级会员,江苏省电源学会会员。刘雯博士在国际专业期刊发表SCI论文40余篇,会议论文50余篇,常年参与IEEE EDL\TED\Applied Physics Letters 等期刊审稿,是IEEE EDL金牌审稿人。其申请发明专利20余件,已授权6件,编制行业标准2项,主持了十余项各级研发项目,包括国家重点研发计划、华为公司横向课题等,2018年以来作为项目负责人已获经费超过800万元。

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研究领域

GaN功率器件、电力电子电路集成与应用

应用场景

1.GaN芯片设计制造

2.GaN集成电路设计

工作经历

2014-至今,西安交利物浦大学先进技术学院EEE系讲师

教育背景

2008年, 南洋理工大学, 博士

2004年,北京大学,学士

科研项目

1、高性能GaN基器件无金工艺和CMOS绝缘薄膜生长技术研究

2、应用GaN基电力电子器件提高无线充电传输效率

3、高性能硅基氮化镓电力电子器件技术开发及产业化

4、应用GaN器件改善无线电能传输效率的研究

专    利

1一种电动汽车的无线充电系统

2一种使用栅介质去实现低导通电阻的增强型氮化镓晶体管的方法

3一种提升氮化镓晶体管击穿电压的方法

4一种优化氮化镓高电子迁移率晶体管钝化的方法

5一种实现低导通电阻的增强型氮化镓晶体管的方法

6无线充电控制系统及装置

7一种织物色差检测方法、装置、存储介质及设备

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发表文献

n Yutao Cai*, Yuanlei Zhang, Ye Liang, Ivona Z. Mitrovic, Huiqing Wen, Wen Liu*, and Cezhou Zhao, "Low ON-State Resistance Normally-OFF AlGaN/GaN MIS-HEMTs With Partially Recessed Gate and ZrOₓ Charge Trapping Layer," in IEEE Transactions on Electron Devices, vol. 68, no. 9, pp. 4310-4316, Sept. 2021, doi: 10.1109/TED.2021.3100002.

n Ang Li, Miao Cui, Yi Shen, Ziqian Li, Wen Liu*, Ivona Z. Mitrovic, Huiqing Wen, and Cezhou Zhao*, Monolithic comparator and sawtooth generator of AlGaN/GaN MIS-HEMTs with threshold voltage modulation and high-temperature applications, IEEE Transactions on Electron Devices, Volume: 68, Issue: 6, Jun 2021. pp 2673-2679. DOI: 202110.1109/TED.2021.3075425

n Miao Cui, Qinglei Bu, Yutao Cai, Wen Liu, Huiqing Wen, Cezhou Zhao et al, “Monolithic Integration Design of GaN-based Power Chip Including Gate Driver for High-Temperature DC-DC Converters” 25 April 2019 Jpn. J. Appl. Phys. 58- 056505

n Y. Cai et al., "Effect of High-k Passivation Layer on High Voltage Properties of GaN Metal-Insulator-Semiconductor Devices," in IEEE Access, vol. 8, pp. 95642-95649, 2020, doi: 10.1109/ACCESS.2020.2995906.

n Yutao Cai, Wen Liu, Miao Cui, Ruize Sun, Yung.C Liang, Huiqing Wen, Li Yang, Siti Supardan, Ivona Z. Mitrovic, Stephen Taylor, Paul R. Chalker and Ce Zhou Zhao, “Effect of Surface Treatment on Electrical Properties of GaN Metal Insulator-Semiconductor Devices with Al2O3 Gate Dielectric” Japanese Journal of Applied Physics, 12 March 2020, Vol 59, No.4, DOI: 10.35848/1347-4065/ab7863

n Miao Cui, Ruize Sun, Qinglei Bu, Wen Liu, Huiqing Wen, Ang Li, Yung Liang, Cezhou Zhao, “Monolithic GaN Half-Bridge Stages with Integrated Gate Drivers for High Temperature DC-DC Buck Converters”. IEEE Access. Vol:7, Page(s): 184375 - 184384 Dec, 09 2019 DOI: 10.1109/ACCESS.2019.2958059.

n 钱洪途,朱永生,邓光敏,刘雯,陈敦军,裴轶.级联结构氮化镓功率器件及其在无线电能传输系统中的应用[J]. 电源学报, 2019,17(3):38-43 核心期刊、JST,CSCD

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